Publications
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1.
2013S. Schöche; T. Hofmann; V. Darakchieva; N. Ben Sedrine; X. Wang; A. Yoshikawa; M. Schubert
Journal of Applied Physics 2013;113(1):. -
2.
2012T. Hofmann; P. Kühne; S. Schöche; Jr-Tai Chen; U. Forsberg; E. Janzén; N. Ben Sedrine; C.M. Herzinger; J.A. Woollam; M. Schubert; et al.
Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
Applied Physics Letters 2012;101(19):. -
3.
2012A. Boosalis; T. Hofmann; V. Darakchieva; R. Yakimova; M. Schubert
Applied Physics Letters 2012;101(1):.
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