Publication Detail
The publication detail shows the title, authors (with indicators showing other profiled authors), information on the publishing organization, abstract and a link to the article in Scopus. This abstract is what is used to create the fingerprint of the publication.
A unified silicon/silicon carbide IGBT model
M. Saadeh; H.A. Mantooth; J.C. Balda; Jerry L. Hudgins; E. Santi; Sei-Hyung Ryu; Anant Agarwal (Profiled Author: Jerry L Hudgins)
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC 2012;():1728-1733.
AbstractDue to policies set forth between SciVerse Scopus and this publisher, the abstract cannot be displayed here.
Scientific Context
This section shows information related to the publication - computed using the fingerprint of the publication - including related publications, related experts with fingerprints representing significant amounts of overlap between their fingerprint and this publication. The red dots indicate whether those experts or terms appear within the publication, thereby showing potential and actual connections.
Related Publications
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1.
2009Alexander Grekov; Zhiyang Chen; Enrico Santi; Jerry Hudgins; Alan Mantooth; David Sheridan; Jeff Casady
Parameter extraction procedure for high power SiC JFET
2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009 2009;():1466-1471. -
2.
2011Alexander E. Grekov; Zhiyang Chen; Ruiyun Fu; Jerry L. Hudgins; H. Alan Mantooth; David C. Sheridan; Jeff Casady; Enrico Santi
Parameter extraction procedure for vertical SiC power JFET
IEEE Transactions on Industry Applications 2011;47(4):1862-1871. -
3.
2004Enrico Santi; Xiaosong Kang; Antonio Caiafa; Jerry L. Hudgins; Patrick R. Palmer; Dale Q. Goodwine; Antonello Monti
Temperature effects on trench-gate punch-through IGBTs
IEEE Transactions on Industry Applications 2004;40(2):472-482.
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