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UAB, Engineering
Barcelona Nanocluster, Engineering
UAB, Math and Physics
UAB, Computer Sciences
Barcelona Nanocluster, Math and Physics
MOS devices
Electric breakdown
Current voltage characteristics
Electric breakdown of solids
Gates (transistor)
Ultrathin films
Hafnium oxides
Gate dielectrics
Hafnium compounds
Atomic force microscopy
Silica
Point contacts
MOS capacitors
Degradation
Electron tunneling
Silicon compounds
Weibull distribution
Circuit simulation
Static random access storage
CMOS integrated circuits
Electron transport properties
Electric conductance
Hafnium
MOSFET devices
Semiconducting gallium
Gallium arsenide
Charge trapping
Logistics
Lanthanum compounds
Electric conductivity of solids
Electric field effects
Switching
Failure modes
Stress analysis
Electric properties
Capacitors
Microscopes
Dielectric films
Electron devices
Statistical methods
Reliability analysis
Semiconductor materials
Semiconducting silicon compounds
Oxygen vacancies
Crystal defects
Thermal effects
Electric currents
Electric insulators
Equivalent circuits
Electric resistance