Engineering

UAB

Research Profile

• 

  breakdown

  
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  MOS devices

  
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  sludge

  
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  Degradation

  
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  Electric breakdown

  
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  oxidation

  
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  sewage

  
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  Leakage currents

  
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  Gates (transistor)

  
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  Gate dielectrics

  

Publications

• 1.

  2013

  Shibing Long; Xiaojuan Lian; Tianchun Ye; Carlo Cagli; Luca Perniola; Enrique Miranda; Ming Liu; Jordi Sune

  Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

  IEEE Electron Device Letters. 2013.

• 2.

  2013

  M. Lanza; Y. Wang; A. Bayerl; T. Gao; M. Porti; M. Nafria; H. Liang; G. Jing; Z. Liu; Y. Zhang; et al.

  Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation

  Journal of Applied Physics. 2013;113(10).

• 3.

  2013

  M. Lanza; A. Bayerl; T. Gao; M. Porti; M. Nafria; G.Y. Jing; Y.F. Zhang; Z.F. Liu; H.L. Duan

  Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization

  Advanced Materials. 2013;25(10):1440-1444.

Journals

•  
  Publications
• Journal of Applied Physics
  47
• Microelectronics Reliability
  47
• Applied Physics Letters
  46
• Microelectronic Engineering
  38
• Physica C: Superconductivity and its applications
  21

Institutional Network

• Internal
  Shared Pub.
• Math and Physics
  212
• Engineering
  134
• Chemistry and Chemical Engineering
  19
• Ecology and Plant science
  14
• Computer Sciences
  14

• External
  Shared Pub.
• Universidad Complutense de Madrid Instituto de Magnetismo Aplicado
  56
• CSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB)
  55
• Interuniversity Micro-Electronics Center at Leuven
  37
• Universitat Politécnica de Catalunya
  32
• Universidad Autónoma de Barcelona, Facultad de Medicina
  29
• Centre de Recerca Ecologica i Aplicacions Forestals
  26