Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

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Enrique Miranda; Jordi Sune; Rosana Rodriguez; Montserrat Nafria; Xavier Aymerich; Luis Fonseca; Francesca Campabadal (Profiled Authors: Xavier Aymerich Humet; Montserrat Nafría Maqueda; Jordi Suñé Tarruella; Enrique Alberto Miranda; Rosana Rodríguez Martínez)

IEEE Transactions on Electron Devices. 2000;47(1):82-89.

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Engineering & Physical Sciences Physics & Astronomy

Related Publications

1.
2004

Enrique Miranda; Jordi Suñé

Electron transport through broken down ultra-thin SiO₂ layers in MOS devices
Microelectronics Reliability. 2004;44(1):1-23.
2.
1998

E. Miranda; I. Sune; R. Rodriguez; M. Nafria; X. Aymerich

Switching behavior of the soft breakdown conduction characteristic in ultra-thin (<5 nm) oxide MOS capacitors
Annual Proceedings - Reliability Physics (Symposium). 1998:42-46.
3.
1999

Enrique Miranda; Jordi Suñé; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich

Function-fit model for the soft breakdown failure mode
IEEE Electron Device Letters. 1999;20(6):265-267.